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本文基于多晶SiGe栅量子阱SiGe pMOSFET器件物理,考虑沟道反型时自由载流子对器件纵向电势的影响,通过求解泊松方程,建立了p+多晶SiGe栅量子阱沟道pMOS阈值电压和表面寄生沟道开启电压模型.应用MATLAB对该器件模型进行了数值分析,讨论了多晶Si1-yGey栅Ge组分、Si1-xGex量子阱沟道Ge组分、栅氧化层厚度、Si帽层厚度、沟道区掺杂浓度和衬底掺杂浓度对量子阱沟道阈值电压和表面寄生沟道开启电压的影响,获得了抑制表面寄生沟道开启的途径.模型所得结果与文献报道结果及ISE仿真结果一致.
Based on the device physics of polycrystalline SiGe gate quantum well SiGe pMOSFET, considering the influence of free carriers on the device longitudinal potential when channel inversion, by solving the Poisson’s equation, the pMOS threshold voltage of p + polycrystalline SiGe gate quantum well is established And surface parasitic channel on-voltage model.The numerical analysis of the device model was carried out by using MATLAB and discussed the Ge composition of poly-Si1-yGey gate, the Ge composition of Si1-xGex quantum well channel, the gate oxide thickness, Si cap Layer thickness, doping concentration of channel region and substrate doping concentration on the channel threshold voltage of quantum well and the turn-on voltage of the surface parasitic channel, the way to suppress the opening of the surface parasitic channel was obtained.The results of the model and the reported results And ISE simulation results.