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本文基于二维泊松方程,建立了适用于亚100nm应变Si/SiGe nMOSFET的阈值电压理论模型.为了保证该模型的准确性,同时考虑了器件尺寸减小所导致的物理效应,如短沟道效应,量子化效应等.通过将模型的计算结果与二维器件模拟器ISE的仿真结果进行对比分析,证明了本文提出的模型的正确性.最后,还讨论了亚100nm器件中常规工艺对阈值电压的影响.该模型为亚100nm小尺寸应变Si器件的分析设计提供了一定的参考.
Based on the two-dimensional Poisson equation, a theoretical model of threshold voltage suitable for sub-100nm strained Si / SiGe nMOSFETs is established.In order to ensure the accuracy of the model, the physical effects caused by the device size reduction are also considered, Effect, quantum effect, etc. The correctness of the model proposed in this paper is proved by comparing the results of the model with the simulation results of two-dimensional device simulator ISE.Finally, the influence of conventional process in sub-100nm devices on threshold Voltage.The model provides a reference for the analysis and design of sub-100nm small-size strained Si devices.