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电子束控制放电CO2激光器的脉冲能量是～50J,光斑直径为～φ60mm,聚焦后光斑直径为～φ20mm,用该激光器在硅中诱导掺入杂质锑和铝,得到了浅突变p-n结。结的大小为直径φ10～15mm,最大为φ20mm,结深为0.2～0.7μm,并具有～500mV的光生电压。
电子束控制放电CO2激光器用于半导体诱导掺杂的研究
【摘 要】
：
电子束控制放电CO2激光器的脉冲能量是～50J,光斑直径为～φ60mm,聚焦后光斑直径为～φ20mm,用该激光器在硅中诱导掺入杂质锑和铝,得到了浅突变p-n结。结的大小为直径φ10～15mm,最大为φ20mm,结深为0.2～0.7μm,并具有～500mV的光生电压。
【机 构】
：
四川大学光电系,成都610064四川大学物理系,成都610064
【出 处】
：
中国激光
【发表日期】
：
1992年19期
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