论文部分内容阅读
,Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostruc
【机 构】
：
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Schoo
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2009年11期
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