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国际整流器针对锂离子电池保护应用推出配备IR最新低压MOSFET硅技术的一系列器件,包括IRL6297SD双N通道DirectFETMOSFET。全新功率MOSFET具有极低的导通电阻,可大幅减少导通损耗。产品可作为N通道及P通道配置的20 V和30 V器件,最高栅极驱动从12Vgs起,非常适合包含了两个串联电池的电池保护电路。IRL6297SD在精密且能高效散热的小
International Rectifier Introduces a Family of Devices Featuring IR’s Newest Low-Voltage MOSFET Silicon Technology for Lithium-Ion Battery Protection Applications, Including the IRL6297SD Dual N-Channel DirectFETMOSFET. The new power MOSFET has very low on-resistance, which drastically reduces conduction losses. Available as 20 V and 30 V devices for N-channel and P-channel configurations, the product features a maximum gate drive from 12 Vgs and is ideally suited for battery protection circuits that include two series cells. IRL6297SD in the small and sophisticated and efficient cooling