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研究了快速热生长二氧化硅MOS结构的负偏压温度不稳定性。这种MOS结构在未经受过金属化后热处理时有室温负偏压不稳定性,但热处理后,其负偏压温度不稳定性就比电阻炉中热生长二氧化硅MOS结构小。研究了快速热生长后在氩气中快速热处理的时间和温度、热生长后在氧气中的冷却方式、金属化后退火的温度对这种不稳定性的影响。金属化时的辐照不但引进正电荷和界面陷阱,也把负偏压温度不稳定性机构引进了MOS结构。另外还研究了负偏压温度应力后平带电压负向位移的时间演化过程,讨论了负偏压温度不稳定性的机制。
The negative bias temperature instability of the rapidly thermally grown silicon dioxide MOS structure was investigated. This kind of MOS structure has the negative temperature instability at room temperature without heat treatment after metallization, but its negative bias temperature instability after heat treatment is smaller than the thermal growth silicon dioxide MOS structure in the resistance furnace. The effects of rapid thermal annealing time and temperature in argon after rapid thermal growth, the cooling in oxygen after thermal growth, and the post-metallization annealing temperature were investigated. Irradiation at the time of metallization not only introduces positive charge and interface traps, but also introduces a MOS structure with a mechanism of negative bias temperature instability. In addition, the time evolution of the negative displacement of the flat zone voltage after negative temperature stress is studied, and the mechanism of the negative bias temperature instability is also discussed.