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对商用BiCMOS模数转换器(ADC)AD678进行不同剂量率下电离辐射效应及室温退火特性的研究。结果表明,ADC的敏感参数在不同剂量率下的响应有差异;模拟电源电流和数字电源电流的辐照响应差别较大,微分非线性误差(DNL)、积分非线性误差(INL)和失码(Misscode)在低剂量率下电离损伤更严重,表现出明显的低剂量率损伤增强效应(Enhanced-Low-Dose-Rate-Sensitivity,ELDRS)。结合工艺条件和空间电荷模型对ADC的损伤机理进行了讨论。
Study on Ionizing Radiation Effect and Room Temperature Annealing Characteristics of Commercial BiCMOS Analog-to-Digital Converter (AD678) at Different Dose Rates. The results show that the sensitivity of ADC is different at different dose rates. There is a large difference between the response of analog supply current and digital supply current. The differential nonlinearity error (DNL), integral nonlinearity error (INL) and missing code (Misscode) has more severe ionization damage at low dose rates and exhibits Enhanced-Low-Dose-Rate-Sensitivity (ELDRS). The damage mechanism of ADC is discussed with the combination of process conditions and space charge model.