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采用改装的直流磁控溅射设备,在适当的氧、氩气体中,对被溅射衬底加热进行YBCO材料的直流磁控溅射,溅射结束继续按温度程序控制曲线原位进行1个大气压下的氧气中退火,所得到的YBCO薄膜,其零电阻转变温度T_co一般在85～90K,临界电流密度J_c(77K)可以大于1×10~6A/Cm~2.
Using a modified DC magnetron sputtering equipment, in a suitable oxygen, argon gas, the substrate was heated YBCO DC magnetron sputtering, the end of the sputtering process according to the temperature control curve in situ 1 Atmospheric pressure oxygen annealing, the resulting YBCO film, the zero resistance transition temperature T_co is generally 85 ~ 90K, the critical current density J_c (77K) can be greater than 1 × 10 ~ 6A / Cm ~ 2.