封装形式对瞬态电压抑制器件电磁脉冲防护特性的影响(英文)

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Adding transient voltage suppressor(TVS) transistors to an electric circuit is an important method to protect it from the fast-risetime electromagnetic pulse(FREMP) damage. The package form of the TVS transistors influences the volume, response time, and power consumption of the circuit. However, the influence of the package form on the clamp voltage of TVS transistors affected by FREMP is not considered yet. In this article, the results of the experiment comparing the influence of package form are described, where the rectangular pulses with rise time shorter than 1 ns are used to test protection performance of three different TVS transistors, which have the same framework but different breakdown voltages. The influence of the different package forms on the clamp voltage is analyzed by using the fitting model. It is found that the package form of TVS transistors has less influence on the current characteristics of their protection performance, but more on the voltage characteristics. It is concluded that the diameter or width of the TVS transistors is the main factor determining the clamp voltage. Thus, the diameter or width of the TVS transistors should be big enough to ensure the stabilization of clamp voltage, but, at the same time, fit the allowing volume. Adding transient voltage suppressor (TVS) transistors to an electric circuit is an important method to protect it from the fast-risetime electromagnetic pulse (FREMP) damage. The package form of the TVS transistors influences the volume, response time, and power consumption of the However, the influence of the package form on the clamp voltage of TVS transistors affected by FREMP is not considered yet. In this article, the results of the experiment comparing the influence of package form are described, where the rectangular pulses with rise time The influence of the different package forms on the clamp voltage is analyzed by using the fitting model. It is found that the package form of TVS transistors has less influence on the current characteristics of their protection performance, but more on the voltage characteristics. It is said that the diameter or width of the TVS transistors is the main factor determining the clamp voltage. However, the diameter or width of the TVS transistors should be big enough to ensure the stabilization of the clamp voltage, but, at the same time, fit the allowing volume.
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