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利用磁控溅射系统,在Si(111)衬底上的SiC缓冲层上溅射Ga2O3纳米颗粒薄膜。然后令该薄膜在NH3中高温退火,在产物中发现直径为数百纳米的GaN棒。直径如此大的GaN棒在国内外鲜有报道。该晶体棒被认为是在Ga2O3薄膜与NH3自组装反应过程中形成。该工艺可为合成大尺寸GaN一维结构提供一条新的途径。
Ga2O3 nanoparticle films were sputtered on a SiC buffer layer on a Si (111) substrate using a magnetron sputtering system. The thin film was then annealed at high temperature in NH3 and a GaN rod with a diameter of several hundred nanometers was found in the product. Such a large diameter GaN rod rarely reported at home and abroad. The crystal rod is believed to be formed during the self-assembly reaction of Ga2O3 film with NH3. The process can provide a new way for synthesizing a large-size GaN one-dimensional structure.