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从理论上设计优化了高效率808nm GaAsP/AlGaAs张应变量子阱激光二极管外延材料的量子阱结构和波导结构参数,并采用低压金属有机气相外延技术实验制备了外延材料。将制作的芯片解理成不同腔长,测试得到外延材料的内损耗系数和内量子效率分别为0.82cm-1和93.6%。把腔长为900μm的单巴条芯片封装在热传导热沉上,器件在准连续工作条件下最大电光效率达到60.5%,相应的斜率效率和输出光功率分别为1.28W/A和74.9W。器件测试结果表明,采用优化的GaAsP/AlGaAs张应变量子阱和宽波导结构,可以有效提高器件的电光效率。
The quantum well structure and waveguide structure parameters of a high efficiency 808nm GaAsP / AlGaAs tensile-strain quantum well laser diode epitaxial material are optimized and optimized theoretically. Epitaxial materials are prepared by the experiment of low-pressure metal-organic vapor phase epitaxy. The fabricated chip was cleaved into different cavity lengths. The internal loss coefficient and internal quantum efficiency of the epitaxial material were 0.82cm-1 and 93.6% respectively. The monobasic chip with a cavity length of 900μm was packaged on a heat conduction heat sink. The maximum electro-optical efficiency of the device under quasi-continuous operation was 60.5%. The corresponding slope efficiency and output optical power were 1.28W / A and 74.9W respectively. The device test results show that the optimized GaAsP / AlGaAs tensile strain quantum well and wide waveguide structure can effectively improve the electro-optical efficiency of the device.