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利用射频（ＲＦ）磁控共溅射技术，以光学石英玻璃为基片，在不同基片温度下制备了系列ＧａＡｓ／ＳｉＯ２半导体纳米颗粒镶嵌薄膜样品。采用岛津光谱仪，对薄膜在２００至２０００ｎｍ波段范围内的透射光谱进行了测量。结果表明，与ＧａＡｓ块体材料相比，薄膜样品吸收边发生明显的蓝移；且随着基片温度的降低，蓝移量增大。而当基片温度达到３００℃时，光谱中出现了明显的吸收峰。量子限域效应是导致这种结果的主要原因。
A series of GaAs / SiO2 semiconductor nanoparticle inlay films were prepared at different substrate temperatures using optical quartz glass as a substrate by RF magnetron sputtering technique. The Shimazu spectrometer was used to measure the transmission spectra of the films in the wavelength range from 200 to 2000 nm. The results show that there is a clear blue shift in the absorption edge of the thin film compared with the GaAs bulk material, and the amount of blue shift increases as the substrate temperature decreases. When the temperature of the substrate reached 300 ℃, there was a clear absorption peak in the spectrum. Quantum confinement effect is the main reason for this result.