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在2.7Pa 至2.7×10~(-2)Pa 氮压力范围,测量了不同压力下电弧源喷射的微粒密度及薄膜沉积速率的变化。随压力升高,微粒密度及膜沉积速率下降。利用 AES 和 SIMS 对不同压力下形成的 TiN 膜及工作后的阴极表面进行了深度剖面分析。最后对实验结果进行了讨论。
In the pressure range of 2.7 Pa to 2.7 × 10 -2 Pa, the variation of particle density and film deposition rate of arc source at different pressures were measured. As pressure increases, the particle density and film deposition rate decrease. The depth profile of the TiN film formed at different pressures and the working cathode surface was analyzed by AES and SIMS. Finally, the experimental results are discussed.