采用离子腐蚀在硅片上制作5～10微米厚、约1厘米直径的薄窗口。这个方法允许所用离子源的变化范围很宽,并在直径为1厘米的面积上提供每小时20微米的腐蚀速度。窗口的表面是平坦而光滑的镜面。窗口的边缘是陡峭的并为离子束的方向所确定。在本实验装置中,被腐蚀的材料起着阴极作用,所以,这个方法只适用于电导材料。 A thin window of 5 to 10 microns in thickness and about 1 cm in diameter was fabricated on silicon using ion etching. This method allows a wide variation of the ion source used and provides an etch rate of 20 micrometers per hour over an area of ​​1 centimeter in diameter. The surface of the window is flat and smooth mirror. The edge of the window is steep and is defined by the direction of the ion beam. In this experiment, the corroded material plays a role of cathode, therefore, this method is only applicable to the conductive material.