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我们利用X射线形貌技术,对GaAs衬底上外延生长的GalnAs、GaAlAs、GaAlAsP结构的失配位错等缺陷进行了观察和分析,也对InGaAsP/InP结构进行了初步观察。X射线形貌相的观察表明,GaAs衬底的异质外延结构中的失配位错,主要是在失配应力作用下位错的弯曲和滑移所致。尽管在GaAlAs层中加入少量磷作应力补偿,但组成的GaAlAsP四元层在压应力和张应力条件下都出现了大量失配位错。在InP衬底上外延生长InGaAsP/InP双异质结构时,在压应力和张应力条件下也可能产生失配位错。
We used X-ray topography to observe and analyze the defects such as the misfit dislocations of GalnAs, GaAlAs and GaAlAsP epitaxially grown on GaAs substrates. The InGaAsP / InP structures were also observed. X-ray topography shows that misfit dislocations in the heteroepitaxial structure of GaAs substrate are mainly caused by the bending and sliding of dislocations under mismatch stress. Despite the addition of a small amount of phosphorus in the GaAlAs layer for stress compensation, the GaAlAsP quaternary layer of the composition shows a large number of misfit dislocations under compressive and tensile stress conditions. InGaAsP / InP double heterostructures are epitaxially grown on InP substrates, misfit dislocations may also occur under compressive and tensile stresses.