针对空间和核工业应用中辐射引起CMOS图像传感器产生暗电流随机电报信号(DC-RTS)问题,对0.18 μm CMOS图像传感器进行不同能量质子、γ射线的辐照试验,辐照后对DC-RTS特征参数进行分析.试验结果表明:由于位移损伤和电离总剂量效应产生的RTS缺陷不同,两种DC-RTS在台阶、最大跳变幅度、平均时间等参数存在差异.相比于位移损伤产生的DC-RTS,电离总剂量产生的DC-RTS具有跳变幅度小、平均时间长的波动特点,导致此类DC-RTS难以检测分析.像素积分期间传输栅电压会对电离总剂量诱发的DC-RTS产生影响.上述工作为深入认识CMOS图像传感器DC-RTS现象、探索相关抑制技术提供重要参考.“,”Radiation damage causes the dark current random telegraph signal (DC-RTS)on CMOS image sensors used for space and nuclear applications.Several 0.18 μm CMOS image sensors were irradiated by distinct proton energy and gamma rays,and the characteristic parameters of DC-RTS were analyzed after irradiation.Experimental results show that there are discrepancies between DC-RTS pixels due to displacement damage and to total ionizing dose effects in terms of discrete level,maximum transition amplitude and average time.This is because both kinds of radiation damage induced RTS defects are different.Contrary to the DC-RTS due to displacement damage,total ionizing dose induced DC-RTS features small transition amplitude and low transition fre-quency,which gives rise to the test and analysis challenge for this DC-RTS.Transfer gate voltage during integration has an important impact on total ionizing dose induced DC-RTS.The above work provides an important reference for the better understanding of DC-RTS phenomenon on CMOS image sensor,and the exploration of relevant sup-pression techniques.