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研究了生长态和退火后Cd1-xMnxTe晶片的吸收边和红外透过性能.Cd1-xMnxTe晶体采用垂直Bridgman法生长,获得面积为30 mm×40 mm的(111)面Cd1-xMnxTe单晶片;晶片在Cd气氛下退火.近红外光谱表明,吸收边的截止波长反映晶片的Mn含量范围为0.1887≤x≤0.2039,其中轴向成分波动差值约为0.0152,径向成分波动差值约为0.0013;x=0.2的Cd1-xMnxTe晶体吸收边的吸收系数变化范围为2.5～55 cm-1;退火后,晶体的吸收边位置没有变化,表明晶片中Mn含量未受到退火的影响.傅里叶变换红外透射光谱表明,晶片在红外光波数为4000～500 cm-1范围的红外透过率为45%～55%;退火后,晶片的红外透过率提高到61%以上,接近理论值65%.
The absorption edge and infrared transmission of Cd1-xMnxTe wafers were investigated by growth and annealing.Cd1-xMnxTe wafers were grown by vertical Bridgman method to obtain (111) Cd1-xMnxTe single crystal wafers with an area of 30 mm × 40 mm. Annealed under Cd atmosphere.The near-infrared spectrum shows that the cut-off wavelength of absorption edge reflects the range of Mn content of the wafer is 0.1887≤x≤0.2039, the difference of axial component fluctuation is about 0.0152, the difference of radial component fluctuation is about 0.0013; The absorption coefficient of the absorption edge of Cd1-xMnxTe crystal with x = 0.2 varied from 2.5 to 55 cm-1. After annealing, the absorption edge position of the crystal did not change, indicating that the Mn content in the wafer was not affected by the annealing. The transmission spectra show that the infrared transmittance of the wafer in the range of 4000-500 cm-1 is 45% -55%. After annealing, the infrared transmittance of the wafer is increased to more than 61%, which is close to the theoretical value of 65%.