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介绍一种外延沉积化合物半导体材料的新方法──电化学原子层外延技术，它将电化学沉积技术与原子层外延技术结合起来，通过运用欠电势技术交替电化学沉积化合物的组成元素一次一个单原子层而实现外延生长。从而使外延技术具有电沉积简单与低成本的优点。欠电势沉积是电化学原子层外延的关键，它是化合物形成过程中放出自由能的结果。并研究了Si-Au多晶衬底上沉积CdTe的电化学原子层外延，给出了初步实验结果。
A new method of epitaxially depositing compound semiconductor materials, called electrochemical atomic layer epitaxy, is proposed. Electrochemical deposition technology is combined with atomic layer epitaxy. Electrochemical deposition of the constituent elements of a compound by using an underpotential technique is described one at a time Atomic layer to achieve epitaxial growth. So that epitaxial technology has the advantages of simple and low cost electrodeposition. Underpotential deposition is the key to the electrochemical atomic layer epitaxy, which is the result of the free energy released during compound formation. The electrochemical atomic layer epitaxy of CdTe deposited on Si-Au polycrystalline substrate was also studied. The preliminary experimental results were given.