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对利用超低压化学气相淀积 (VLP CVD)技术在Si上自组织生长Ge量子点的特征进行了研究 ,发现生长温度对Ge量子点尺寸分布和密度的影响不同于分子束外延 (MBE)的结果 ,这种现象与VLP CVD表面控制反应模式有关。实验表明 ,选择适当的生长温度可以在Si上自组织生长具有窄尺寸分布和高密度的Ge量子点
The characteristics of self-organized growth of Ge quantum dots by ultra-low pressure chemical vapor deposition (VLP CVD) on Si have been studied. It is found that the influence of growth temperature on the size distribution and density of Ge quantum dots is different from that of molecular beam epitaxy As a result, this phenomenon is related to the VLP CVD surface-controlled reaction pattern. Experiments show that the selection of the appropriate growth temperature can self-grow on Si with a narrow size distribution and high density of the Ge quantum dots