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采用电化学C-V方法和Tiron电解液研究了GaMnSb/GaSb单晶载流子浓度的纵向分布,所得结果与Hall测量结果和X射线衍射分析结果一致。研究结果表明GaMnSb单晶中的Mn原子替代了GaSb中部分Ga原子的位置,并在GaSb中形成了浅受主能级。
The longitudinal distribution of GaMnSb / GaSb single-crystal carrier concentration was studied by electrochemical C-V method and Tiron electrolyte. The results are consistent with the results of Hall measurement and X-ray diffraction analysis. The results show that the Mn atoms in GaMnSb single crystals replace the positions of some Ga atoms in GaSb and form shallow acceptor levels in GaSb.