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在半导体量子阱器件中,激子发光占有非常重要的地位。阐述了半导体材料中激子扩散动力学研究进展。首先在介绍半导体量子阱中激子的新奇发光现象——双发光环的基础上,阐明了双环图案形成的物理机制;其次介绍了量子阱中偶极激子扩散的特点与物理机制,总结了静电陷阱和应力陷阱中的激子非线性扩散动力学的理论与实验研究成果,然后对有机物半导体中激子扩散进行了概述;最后展望了半导体量子阱中激子的玻色-爱因斯坦凝聚在大功率、低功耗的光电子器件、超快逻辑器件和量子计算中的应用前景。
In semiconductor quantum well devices, exciton emission occupies a very important position. The progress of exciton diffusion kinetics in semiconductor materials is described. First of all, we introduce the novel exciton luminescence in semiconductor quantum wells - the double luminescent ring, and elucidate the physical mechanism of double-ring pattern formation. Secondly, we introduce the characteristics and physical mechanism of dipole exciton diffusion in quantum wells, Electrostatic traps and stress traps in the exciton nonlinear diffusion kinetics theory and experimental research results, and then exciton diffusion in organic semiconductors are summarized; Finally, the prospects for the semiconductor quantum wells exciton Bose - Einstein condensation Applications in high power, low power optoelectronic devices, ultrafast logic devices and quantum computing.