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利用固相反应法合成了一系列的La_(1-x_Pb_xOBiS_2和LaOBi_(1-x)Pb_xS_2(x=0,0.01,0.02,0.03,0.05,0.1)样品,并研究了Pb掺杂对LaOBiS_2的晶体结构及电磁性能的影响.XRD测试结果表明,所有样品均具有CeOBiS_2型晶体结构,而且Pb的掺杂导致LaOBiS2的晶格发生明显的变化.磁性测量结果表明,所有样品和LaOBiS_2的磁性相似,在低温下均为顺磁性特征.尽管Pb在LaOBiS_2中掺杂不能导致超导电性的发生,但对其电阻率产生了明显的影响,Pb在La位掺杂抑制了LaOBiS_2的金属-半导体转变,使其电阻率在室温以下表现为半导体的特征.同样Pb在YbOBiS_2中的掺杂也没观察到超导转变.
A series of samples of La_ (1-x_Pb_xOBiS_2) and LaOBi_ (1-x) Pb_xS_2 (x = 0,0.01,0.02,0.03,0.05,0.1) were synthesized by solid-state reaction and the effects of Pb doping on the crystal structure of LaOBiS_2 Structure and electromagnetic properties.The XRD results show that all the samples have the CeOBiS 2 type crystal structure and the doping of Pb leads to a significant change of the lattice of LaOBiS 2. The magnetic measurements show that all the samples have similar magnetic properties to LaOBiS 2 And low temperature are all paramagnetic characteristics.Although Pb doped in LaOBiS 2 can not lead to superconductivity, its resistivity has a significant effect. Pb doping at La suppresses the metal-semiconductor transition of LaOBiS 2 Its resistivity is characterized by semiconductors at room temperature, and no superconducting transition is observed in the doping of Pb in YbOBiS_2.