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本文从磷掺杂对价带顶上隙态和导带带尾分布的影响,讨论了掺杂对非晶硅隙态的影响。轻掺杂使带隙深处态密度增加;重掺杂还加宽了价带带尾。掺杂对导带带尾影响不明显,掺杂造成光隙的减少是由于价带带尾单方面变动造成的。
In this paper, the effect of doping on the gap state of amorphous silicon is discussed from the influence of phosphorus doping on the top valence band gap and the conduction band tail distribution. Light doping increases the density of states in the deep bandgap; heavy doping also widens the valence band tail. The effect of doping on the tail of the conduction band is not obvious. The reduction of the optical gap caused by the doping is caused by the unilateral change of the tail of the valence band.