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采用SOL-GEL工艺,在S I(100)衬底上制备了BA1-XSRXTIO3(0.1≤X≤0.3)多晶薄膜,并用椭偏光谱仪在光子能量为2.0~5.2 EV的范围内,测量了不同SR含量X下BA1-XSRXTIO3多晶薄膜的椭偏光谱。建立适当的拟合模型,用最优化法获得了所有样品的光学常数(折射率N和消光系数K)谱及能隙宽度EG。比较这些结果发现:在低能区,BA1-XSRXTIO3薄膜的折射率N随SR含量X的增加无明显变化,但其吸收边向高能方向移动。表明BA离子被SR离子取代后,BA1-XSRXTIO3薄膜的能隙宽度EG增大。
The polycrystalline films of BA1-XSRXTIO3 (0.1≤X≤0.3) were prepared on SI (100) substrates by using SOL-GEL technique. The photoluminescence spectra of different SR Ellipsometry of Polycrystalline BA1-XSRXTIO3 Thin Films at Content X. An appropriate fitting model was established, and the optical constants (refractive index N and extinction coefficient K) spectrum and energy gap width EG of all the samples were obtained by the optimization method. Comparing these results, we found that the refractive index N of BA1-XSRXTIO3 film does not change significantly with the increase of SR content in the low energy region, but the absorption edge shifts to the higher energy direction. It shows that the energy gap width EG of BA1-XSRXTIO3 film increases when BA ions are replaced by SR ions.