采用量子尺寸的多孔硅作为衬底 ,利用区域优先成核在多孔硅表面上成功地生长了 Ge量子点 .由于量子限制效应锗的 PL 谱发生了明显的蓝移 ,计算表明在傅里叶红外光谱中观察到的中红外 (5— 6 μm)吸收峰是源于量子点中的亚能带跃迁 (两个重空穴能级之间的跃迁 ) ,这为 Ge量子点红外光探测器的应用提供了理论基础 Quantum-size porous silicon was used as the substrate and Ge quantum dots were successfully grown on the surface of porous silicon by region-prioritized nucleation.While the blue-shifted PL spectra of germanium due to the quantum confinement effect have been calculated, the results show that in the Fourier transform infrared The mid-infrared (5- 6 μm) absorption peak observed in the spectrum is due to the sub-band transition (transition between two heavy hole levels) in the quantum dot, which is the same for the Ge Quantum Dot Infrared Photodetector Application provides a theoretical basis