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应用标准0.18μm CMOS工艺设计并实现了宽带交叉耦合LC压控振荡器.采用开关电容阵列拓宽频率范围.设计过程中对相位噪声进行了优化.应用线性时变模型(LTV)推导出相位噪声与MOS晶体管宽长比之间的函数关系,从理论上给出相位噪声性能最优的元件参数取值范围.为简化推导过程,针对电路特点按晶体管工作状态来细分电路工作区域,从而避免了大量积分运算,以尽可能简单的比例形式得到相位噪声与设计变量间的函数关系.测试结果表明,在1.8V电源电压下,核心电路工作电流为8.8mA,压控振荡器的频率范围为1.17 ～1.90GHz,10kHz频偏处相位噪声达到-83dBc/Hz.芯片面积为1.2mm×0.9mm.
A wideband cross-coupled LC voltage controlled oscillator is designed and implemented using a standard 0.18μm CMOS process. A switched capacitor array is used to broaden the frequency range. The phase noise is optimized during the design process. The linear time-varying model (LTV) MOS transistor width to length ratio as a function of the theoretical phase noise performance is given the optimal parameter range of components.In order to simplify the derivation process, according to the circuit characteristics of transistor work to subdivide the working area of the circuit, thus avoiding the A large number of integral operations, as a simple form of the proportion of the phase noise can be obtained as a function of design variables.The test results show that the 1.8V supply voltage, the core operating current of 8.8mA, voltage-controlled oscillator frequency range of 1.17 ~ 1.90GHz, the phase noise at 10kHz frequency offset reaches -83dBc / Hz. The chip area is 1.2mm × 0.9mm.