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在绝缘层附着硅(SOI)结构的Si膜上生长SiGe合金制作具有SiGe量子阱沟道的SOIp型金属氧化物半导体场效应晶体管(PMOSFET),该器件不仅具有SOI结构的优点,而且因量子阱中载流子迁移率高,所以进一步提高了器件的性能.在分析常规的SiSOI MOSFET基础上,建立了应变SiGe SOI量子阱沟道PMOSFET的阈值电压模型和电流-电压(I-V)特性模型,利用Matlab对该结构器件的I-V特性、跨导及漏导特性进行了模拟分析,且与常规结构的器件作了对比.模拟结果表明,应变SiGe SOI量子阱沟道PMOSFET的性能均比常规结构的器件有大幅度提高.
An SiGe alloy is grown on a silicon film with a silicon-on-insulator (SOI) structure to form an SOIp-type metal oxide semiconductor field-effect transistor (PMOSFET) having a SiGe quantum well channel. The device not only has the advantages of an SOI structure, Carrier mobility is high, so the performance of the device is further improved.On the basis of analyzing the conventional SiSOI MOSFET, a threshold voltage model and a current-voltage (IV) characteristic model of a strained SiGe SOI quantum well channel PMOSFET are established, Matlab simulation of IV characteristics, transconductance and leakage conductance characteristics of the device, and compared with conventional devices.The simulation results show that the performance of strained SiGe SOI quantum well channel PMOSFET devices are better than the conventional devices There is a substantial increase.