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在现有的一台蒸发镀膜机基础上,设计加工了一个双热舟化学气相沉积系统.该系统具有真空度高、升温速度快、源和衬底温度可分别控制等优点,有利于化合物半导体纳米材料的生长.利用该生长系统,通过在生长过程中掺入等电子杂质In作为表面活性剂,分别在Si衬底和3CSiCSi衬底上生长出高质量的具有纤锌矿结构的单晶GaN纳米线和纳米尖三棱锥.所得产物通过场发射扫描电子显微镜、高分辨透射电子显微镜、能量色散x射线谱仪、x射线衍射仪,和荧光谱仪进行表征.这里所用的生长方法新颖,生长出的GaN纳米尖三棱锥在场发射和激光方面有潜在的应用价值.
Based on the existing evaporation coating machine, a double-heated-boat chemical vapor deposition system is designed and manufactured, which has the advantages of high vacuum degree, fast heating rate, controllable source and substrate temperatures, Nanomaterials growth. By using this growth system, high-quality single-crystal GaN with wurtzite structure was grown on Si substrate and 3CSiCSi substrate by doping the In-based impurity In as a surfactant during the growth process Nanowires and nano-tip triangular pyramids.The resulting product was characterized by field emission scanning electron microscopy, high resolution transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffractometry, and fluorescence spectroscopy. The growth methods used here were novel, Of GaN nano-point triangular pyramid in field emission and laser has potential applications.