论文部分内容阅读
对掺有镉、硒、硫的玻璃在 5 0 0— 80 0℃退火 2— 2 4h ,生长了不同尺寸的CdSxSe1 x纳米晶体 .用分光光度计和光致发光光谱 (PL)分析了纳米晶体的性能 .退火温度低于 5 5 0℃ ,纳米晶体处于成核阶段 ,6 0 0— 6 2 5℃处于正常扩散生长阶段 ,70 0— 80 0℃处于竞争生长阶段 ;而 6 5 0℃处于两种生长阶段之间 .虽然 6 5 0℃下生长的纳米晶体的尺寸分布比较窄 ,但纳米晶体的尺寸随退火时间的延长几乎不变 ,在该温度改变退火时间很难改变纳米晶体的平均尺寸 .在所有样品中出现了深能级缺陷 ,在 6 5 0℃退火时间小于 4h或大于 16h有利于减少深能级缺陷的密度 .
The CdSxSe1x nanocrystals with different size were annealed at 500 ~ 80 ℃ for 2-4h, and the growth of CdSxSe1x nanocrystals were analyzed by spectrophotometer and PL spectrophotometry The annealing temperature is lower than 550 ℃, the nanocrystals are in the nucleation stage, the normal diffusion growth stage at 600-650 ℃, the competitive growth stage at 70-80 ℃, Although the size distribution of nanocrystals growing at 650 ℃ is relatively narrow, the size of the nanocrystals almost does not change with the extension of the annealing time, and it is difficult to change the average size of the nanocrystals during the annealing time Deep-level defects appeared in all the samples, and the annealing time at 650 ℃ was less than 4h or more than 16h, which was conducive to reducing the density of deep-level defects.