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采用准分子脉冲激光沉积 (PL D)工艺 ,制备了 Au/ PZT/ p- Si结构铁电存储二极管 .在氧气氛 35 0℃低温沉积、原位 5 30℃快速退火工艺条件下 ,获得了多晶纯钙钛矿结构的 Pb (Zr0 .5 2 Ti0 .48) O3(PZT)铁电薄膜 . PZT薄膜的铁电性能测试显示较饱和的、不对称的电滞回线 ,其剩余极化和矫顽场分别为 13μC/ cm2和 48k V/ cm.从C- V和 I- V特性曲线观察到源于铁电极化的回滞现象 ,记忆窗口约 1.1V,+4 V偏压下电流密度为 3.9× 10 - 6 A/cm2 .
Au / PZT / p-Si ferroelectric memory diodes were fabricated by using an excimer pulsed laser deposition (PLD) process. Under the conditions of low temperature deposition at 35 ℃ in oxygen atmosphere and rapid annealing at 530 ℃ in situ, Pb (Zr0.52Ti0.48) O3 (PZT) ferroelectric thin films with crystalline pure perovskite structure.The ferroelectric properties of PZT thin films show a more saturated and asymmetrical hysteresis loop, and the residual polarization and The coercive fields were 13μC / cm2 and 48kV / cm, respectively.The hysteresis originating from ferroelectric polarization was observed from C-V and I-V curves with a memory window of about 1.1V and a current density at +4 V bias 3.9 × 10 -6 A / cm 2.