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Doped micro-crystalline silicon films are deposited at temperatures as low as 400 ℃ by the catalytic chemical vapor deposition method using a silane and hydrogen gas mixture. Electrical properties such as the carrier concentration and the Hall mobility are investigated for various measuring temperatures. It is found that the grains of micro-crystalline silicon are preferentially oriented along the (220) direction , and that the Hall mobility is larger than 8 cm 2·V -1 ·s -1 , the carrier concentration is about 1×10 17 cm -1 ～1×10 19 cm -3 at room temperature.
Doped micro-crystalline silicon films are deposited at temperatures as low as 400 ° C by the catalytic chemical vapor deposition method using a silane and hydrogen gas mixture. found that the grains of micro-crystalline silicon are preferentially oriented along the (220) direction, and that the Hall mobility is larger than 8 cm 2 · V -1 · s -1, the carrier concentration is about 1 × 10 17 cm - 1 to 1 × 10 19 cm -3 at room temperature.