在激光辐照或退火作用下 ,As2 S3非晶半导体薄膜的光学吸收边出现红移现象 ,并且随着激光功率的增大和辐照时间的延长 ,红移值增大 ,并最后达到饱和。这种红移在先经过退火处理再激光辐照的薄膜中是可逆的。从扫描电镜的形貌图中也可以看出 ,经激光辐照后 ,薄膜表面有晶相出现 ,且随着激光功率的增加 ,晶相出现增多。As2 S3非晶半导体薄膜中光致效应的产生是由于光致结构变化所致 ,对其产生原因 ,进行了机理分析 Under laser irradiation or annealing, the optical absorption edge of As2 S3 amorphous semiconductor film appears red shift, and the red shift increases with the increase of laser power and irradiation time, finally it reaches saturation. This redshift is reversible in thin films that have been annealed and then laser irradiated. It can also be seen from the topograph of scanning electron microscope that after the laser irradiation, the crystalline phase appears on the surface of the film, and as the laser power increases, the crystal phase appears more. The photoinduced effect in As2 S3 amorphous semiconductor thin film is due to the change of the photo-structure, and its cause is analyzed. The mechanism analysis