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分别对p-i-n和n-i-p两种结构的硅基光电探测器的背面离子注入层进行激光退火处理,辐照功率分别为0.5、1、1.25和1.5J/cm~2。根据激光退火激活载流子模式计算了载流子激活率,获得了载流子浓度和接触电阻的变化量。通过对比器件的电学和光学性能,发现采用1.5J/cm~2的激光,离子注入方式得到的硼离子和磷离子的激活率达到75.0%和92.6%,使得p-i-n和n-i-p结构器件的背接触电阻分别从未退火的22.3Ω和15.89Ω降低至7.32Ω和7.63Ω,显著改善了硅基光电探测器的正向特性。在100mV反向偏压下激光退火至少降低了10%的暗电流,并增强p-i-n结构峰值处约1%的光谱响应和n-i-p结构峰值处约5%的光谱响应。
The back ion implantation layers of p-i-n and n-i-p two-structure silicon-based photodetectors were annealed by laser, the irradiation powers were 0.5,1,1.25 and 1.5 J / cm ~ 2, respectively. The carrier activation rate was calculated according to the carrier mode activated by laser annealing, and the change of carrier concentration and contact resistance was obtained. By comparing the electrical and optical properties of the devices, we found that the activation rates of boron ions and phosphorus ions obtained by ion implantation can reach 75.0% and 92.6% with the laser of 1.5J / cm ~ 2, making the back contact resistance of pin and nip devices Respectively, from 22.3Ω and 15.89Ω, which are not annealed, to 7.32Ω and 7.63Ω respectively, which significantly improves the forward characteristics of the silicon-based photodetector. Laser annealing reduced the dark current by at least 10% at 100 mV reverse bias and enhanced the spectral response of about 1% at the p-i-n peak and about 5% at the peak of the n-i-p structure.