制备了几种PLOTOX结构EEPROM存贮管,对其擦写过程作了测试分析.讨论了擦写时存贮管电容分压的物理模型,实验测量通过超薄氧化层的Fowler-Nordheim隧道电流,推导出在擦写过程中浮栅上存贮电荷量的计算公式.研究了存贮管的阈值电压,特别指出它不仅与浮栅上积累电荷有关,而且与测量时的漏电压有关,建立了存贮管阈值电压的计算公式.最后,介绍了实验结果并作讨论,指出有关公式可作为设计EEPROM存贮单元的基础. Several kinds of PLOTOX structure EEPROM memory tubes were fabricated and their erasing and writing processes were tested and analyzed.The physical model of the capacitance of the memory tube during erasing and writing was discussed.The tunneling current through the ultrathin oxide layer was measured experimentally, The formula for calculating the charge stored on the floating gate during erasing and writing is deduced.The threshold voltage of the storage transistor is studied, and it is pointed out that it is not only related to the accumulation of charge on the floating gate but also to the leakage voltage during measurement, Finally, the experimental results are introduced and discussed, and the relevant formulas can be used as the basis for designing EEPROM memory cells.