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利用溶胶凝胶工艺在Pt/TiO2/SiO2/Si衬底上制备了Co掺杂量为0~10%(摩尔分数)的(Ba0.6Sr0.4)Ti1-xCoxO3薄膜。研究了薄膜的结构、表面形貌、介电性能与Co掺杂量的关系。薄膜的介电损耗随着Co含量的增加而减少,在摩尔含量10%时达到最小值0.0128。FOM值在摩尔含量为2.5%达到最大值20,它的介电常数、介电损耗和调谐量分别为639.42、0.0218、43.6%。
A (Ba0.6Sr0.4) Ti1-xCoxO3 thin film with Co doping amount of 0-10% (mole fraction) was prepared on a Pt / TiO2 / SiO2 / Si substrate by sol-gel process. The relationship between the structure, surface morphology, dielectric properties and Co doping amount was studied. The dielectric loss of the films decreases with the increase of Co content, reaching a minimum value of 0.0128 at 10% molar content. The FOM value reaches a maximum of 20 at a molar content of 2.5%, and its dielectric constant, dielectric loss and tuning amount are 639.42, 0.0218 and 43.6%, respectively.