论文部分内容阅读
已经研究出了一种新的磁场LEC(MLEC)直拉设备,MLEC设备由超导磁场装置和本国改进的高压单晶炉组成,用超导磁体代替常规电磁体,能够对压力室内坩锅中心位置横向地施加300Oe的磁场(0.3wb/cm~3)。通过使用大于1250Oe磁场,使GaAs熔体的温度波动从18℃显著降低到0.1℃。用上述磁场,已经首次成功地生长出直径为2in的GaAs单晶。
A new magnetic LEC (MLEC) CZR has been developed. The MLEC consists of a superconducting magnetic field device and an improved high-pressure single crystal furnace in the country. A superconducting magnet instead of a conventional electromagnet can be used to measure the pressure in the crucible center A magnetic field of 300 Oe (0.3 wb / cm ~ 3) was applied laterally. By using a magnetic field greater than 1250 Oe, temperature fluctuations of the GaAs melt are significantly reduced from 18 ° C to 0.1 ° C. With the above magnetic field, a GaAs single crystal with a diameter of 2 in has been successfully grown for the first time.