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利用金属有机物化学气相沉积(MOCVD)技术在蓝宝石衬底上制备了GaN∶Mg薄膜。首先,对Delta掺杂p型GaN的掺杂源流量进行优化研究,研究发现在较低46cm~3/min的CP_2Mg源流量下,晶体质量和导电性能都有所改善,获得了较高空穴浓度,为8.73×10~(17) cm~(-3),(002)和(102)面FWHM分别为245和316arcsec。随后,采用XRD、Hall测试、PL以及AFM研究了在生长过程中加入生长停顿对Delta掺杂p型GaN材料特性的影响,发现加入生长停顿后,样品电学特性、光学特性和晶体质量并未得到改善,反而下降。
A GaN: Mg thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Firstly, the doping source flow rate of Delta-doped p-type GaN is optimized. The results show that the crystal quality and electrical conductivity of the p-type GaN with Delta lower 46cm ~ 3 / min are improved, and the higher hole concentration , Which is 8.73 × 10 ~ (17) cm -3, FWHM of (002) and (102) are 245 and 316 arcsec, respectively. Subsequently, XRD, Hall test, PL and AFM were used to study the effects of growth pause on the properties of delta-doped p-type GaN. The results showed that the electrical properties, optical properties and crystal quality of the samples were not obtained after the growth was stopped Improve, but decline.