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研究了长波8~15μm波段,阻值大于440ΩMCT光导红外探测器,探测率在10kHz,14μm大于4×1010 cm·Hz1/2/W,在1kHz和10kHz中心频率下的噪声测试,中波5~8μm红外光伏型InSb器件,探测率在25kHz,8.26μm大于1×1011 cm·Hz1/2/W,在1kHz和255kHz中心频率下的噪声测试,并对器件信号进行了测试。信号和噪声测试是在124A锁相放大器测试系统测试,对124A测试系统的不确定度进行了分析,并与动态信号分析仪35670A对器件在0~50kHz频谱范围的噪声进行了测试和比较。实验结果表明,高阻值的光导器件在1kHz和10kHz中心频率下噪声相差约1.4倍,光伏型InSb器件在1kHz和15kHz中心频率下噪声相差约1.5倍,信号测试结果在1kHz下和3kHz中心频率下变化不超过3%。通过测试和比较,对高频下的测试给出了建议。
The long-wave 8 ~ 15μm band, the resistance of more than 440ΩMCT photoconductive infrared detector, the detection rate of 10kHz, 14μm greater than 4 × 1010cm · Hz1 / 2 / W, at 1kHz and 10kHz center frequency noise test, 8μm infrared photovoltaic InSb devices, the detection rate of 25kHz, 8.26μm greater than 1 × 1011 cm · Hz1 / 2 / W, at 1kHz and 255kHz center frequency noise test, and the device signal was tested. The signal and noise tests are performed on the 124A lock-in amplifier test system. The uncertainty of the 124A test system is analyzed. The noise of the device in the 0-50 kHz spectral range is also tested and compared with the dynamic signal analyzer 35670A. The experimental results show that the high-resistance photoconductive devices have a noise difference of about 1.4 times at 1 kHz and 10 kHz center frequency. The photovoltaic InSb devices have about 1.5 times the noise difference at 1 kHz and 15 kHz center frequencies. The signal test results at 1 kHz and 3 kHz center frequency Under the change of not more than 3%. Through the test and comparison, gives recommendations for testing under high frequency.