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制备了一种基于高介电常数材料氧化铪(HfO2)薄膜作为核心绝缘介质层的金属-金属(MTM)反熔丝单元结构。基于此结构,使用钛(Ti)和氮化钛(TiN)分别作为MTM反熔丝结构中的过渡层和阻挡层,得到了致密、均匀、无针孔缺陷以及上下电极接触良好的反熔丝单元。讨论了反熔丝单元的击穿过程及击穿现象,并重点研究了该结构的击穿特性和时变击穿(TDDB)特性。研究结果表明,此结构不仅具有良好的工艺一致性和较低的击穿电压(4.3 V),并且工作电压(1.8 V)下的时变击穿时间超过13年。其结构可以进一步应用于反熔丝型现场可编程逻辑阵列(FPGA)的互连结构。
A metal-to-metal (MTM) antifuse cell structure based on a HfO2 film with a high dielectric constant was prepared. Based on this structure, titanium (Ti) and titanium nitride (TiN) were used as the transition layer and the barrier layer in the antifuse structure of MTM respectively to obtain a dense, uniform, pinhole-free defect and anti-fuse with good contact between the upper and lower electrodes unit. The breakdown process and breakdown of the antifuse element are discussed. The breakdown characteristics and TDDB characteristics of the antifuse element are also discussed. The results show that this structure not only has good process uniformity and lower breakdown voltage (4.3 V), but also has a time-varying breakdown time of over 13 years at an operating voltage (1.8 V). Its structure can be further applied to the anti-fuse field programmable logic array (FPGA) interconnect structure.