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最近Ford微电子公司采用低压MOVPE技术以碳作为基区层掺杂剂制作了具有毫米波性能的HBT。采用重掺杂碳的基区层,既能降低基区电阻,又能维持高发射极注入效率所需的突变的受主分布。HBT所需外延层是用多片低压MOVPE系统生长的,碳掺杂源为四氯化碳,重掺杂基区的载流子浓度高达1×10~(20)cm~(-3),霍耳迁移率为65cm~2/V·s。器件用自对准技术制成,尺寸为1.5μm×8.5μm,所用工艺有:化学台面腐蚀、H_2~+离子注入隔
Recently, Microelectronics Microelectronics made HBT with millimeter-wave performance using low-voltage MOVPE technology with carbon as the base-layer dopant. The heavily doped carbon base layer not only reduces the base resistance, but also sustains the abrupt acceptor distribution required for high emitter injection efficiency. The epitaxial layer required for HBT is grown by multi-piece low-voltage MOVPE system. The carbon doping source is carbon tetrachloride, and the carrier concentration in heavily doped base region is as high as 1 × 10 ~ (20) cm ~ (-3) Hall mobility is 65cm ~ 2 / V · s. The device is made with self-alignment technology, the size of 1.5μm × 8.5μm, the process used are: chemical mesa corrosion, H_2 ~ + ion implantation