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用TiCI4和 H2O经表面化学反应生长出TIO2而制备出光学薄膜。在240 mm直径上的厚度分布不均匀性小于1%。25℃下生长的TiO2薄膜结构为非晶态;当温度增加至400℃时结构变为多晶态。二次离子质谱表明在各种生长温度下薄膜中均存留有氯化物。但这种残留氯化物可通过400℃的加热退火去除。25℃下生长的TiO2薄膜的激光破坏阈值在波长 1064 nm,脉宽 1ns时为 5J/cm2 。较高温度下生长的TiO2薄膜的破坏阈值将下降。膜中的氯化物对激光破坏阈值并无影响。
An optical film was prepared by surface-chemical reaction of TIO2 with TiCl4 and H2O. Thickness unevenness on the 240 mm diameter is less than 1%. The structure of TiO2 thin film grown at 25 ℃ is amorphous and the structure becomes polycrystalline when the temperature is increased to 400 ℃. Secondary ion mass spectrometry showed that chloride remained in the film at various growth temperatures. However, this residual chloride can be removed by thermal annealing at 400 ° C. The laser damage threshold of TiO2 film grown at 25 ℃ is 5 J / cm2 at a wavelength of 1064 nm and a pulse width of 1 ns. The damage threshold of TiO2 films grown at higher temperatures will decrease. The chloride in the film has no effect on the laser damage threshold.