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硒化镉(CdSe)的表面加工质量对CdSe基器件的性能至关重要。化学机械抛光(CMP)是一种获得高质量晶体加工表面的常用方法。为改善CdSe晶片的表面加工质量,以SiO_2水溶胶配制抛光液,研究了抛光液磨料质量分数、抛光液pH值、氧化剂NaClO的质量分数、抛光盘转速和抛光时间等因素对CdSe晶片抛光去除速率和表面质量的影响,优化了CdSe的CMP工艺参数。结果表明,在优化工艺条件下,CdSe的平均去除速率为320 nm/min,晶片的抛光表面无明显划痕和塌边现象。原子力显微镜(AFM)测量结果表明,抛光后的CdSe晶片表面粗糙度为0.542 nm,可以满足器件制备要求。
Surface finish quality of cadmium selenide (CdSe) is crucial for the performance of CdSe based devices. Chemical mechanical polishing (CMP) is a commonly used method to obtain high quality crystal-machined surfaces. In order to improve the surface processing quality of CdSe wafers, the polishing solution was prepared by using SiO 2 hydrosol to study the polishing removal rate of CdSe wafers, such as polishing solution abrasive mass fraction, pH value of polishing solution, mass fraction of oxidant NaClO, polishing disk rotation speed and polishing time And surface quality of the optimization of the CdSe CMP process parameters. The results show that the average removal rate of CdSe is 320 nm / min under optimized conditions, and there is no obvious scratches and slump on the polished surface of the wafer. Atomic force microscopy (AFM) measurement results show that the polished CdSe wafer surface roughness of 0.542 nm, to meet the device preparation requirements.