对相同工艺制作但基区掺杂浓度不同的国产NPN双极晶体管,在不同剂量率条件下进行60Coγ辐照效应和退火特性研究。结果显示,晶体管基区掺杂浓度不同,对高、低剂量率的辐照响应也不相同,低基区掺杂浓度的晶体管辐照损伤明显高于高基区掺杂浓度的晶体管。 The domestic NPN bipolar transistors fabricated in the same process but different doping concentrations in the base region were irradiated with 60Co γ at different dose rates and the annealing characteristics were investigated. The results show that the doping concentration of the base region of the transistor is different, and the irradiation response to the high and low dose rates is also different. The radiation damage of the transistor with low base doping concentration is obviously higher than that of the high base doping concentration transistor.