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１短波激光器问题可见波段的ＧａＡｓＰ半导体激光器于１９６２年与ＧａＡｓ激光器同时出现［２７］。第一批样品（扩散同质结）用电流泵浦时在红辐射区（～７００ｎｍ）工作。最好的结果在激活介质ＡｌＩｎＧａＰ异质结构上得到，工作在６２０ｎｍ区（室温极限波长为６１...
Shortwave Laser Problems The visible band GaAsP semiconductor laser appeared in 1962 with the GaAs laser [27]. The first samples (diffusion homojunction) were operated in the red-radiation region (~ 700nm) when pumped with current. The best results are obtained on the AlInGaP heterostructure of the activation medium, working in the 620 nm region (room temperature limit wavelength 61 ...