本文通过求解二维泊松方程,为应变Si全耗SOI MOSFET建立了全耗尽条件下表面势模型,利用传统的漂移-扩散理论.在表面势模型的基础上,得到了应变Si全耗SOI MOSFET的亚阈电流模型,并通过与二维器件数值模拟工具ISE的结果做比较,证明了所建立的模型的正确性.根据所建立的模型,分析了亚阈电流跟应变Si应变度的大小,应变Si膜的厚度和掺杂浓度的关系,为应变Si全耗SOIMOSFET物理参数设计提供了重要参考. In this paper, by solving the two-dimensional Poisson’s equation, a fully depleted surface potential model for a strained Si fully depleted SOI MOSFET is established, using the traditional drift-diffusion theory. On the basis of the surface potential model, a fully depleted SOI MOSFET subthreshold current model and compared with the results of two-dimensional device numerical simulation tool ISE to prove the correctness of the established model.According to the established model, the subthreshold current and strain Si strain magnitude , The relationship between the thickness of the strained Si film and the doping concentration provides an important reference for the design of the physical parameters of the strained Si fully depleted SOIMOSFET.