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半绝缘碳化硅单晶(SI-SiC)是非常具有吸引力的大功率电子器件衬底材料,目前已越来越多地引起了人们的重视。其晶片电阻率的测试一直是一个难题。介绍了一种非接触电阻率测试方法,可以有效地解决这一难题。该方法利用电容充放电原理。首先对样品进行瞬时充电,再利用仪器实时检测放电过程中的总电量,从而得到其变化的弛豫曲线,之后对该曲线进行数学分析得到弛豫时间τ,最后利用弛豫时间τ计算出半绝缘碳化硅单晶的电阻率。实际测试时,先将晶片表面划分为若干等面积的小区域,再利用仪器逐个测试这些区域的电阻率,最后将所有电阻率的数据处理成一张电阻率分布图。该方法对半绝缘材料的研究工作具有积极的指导作用。
Semi-insulating silicon carbide single crystal (SI-SiC) is very attractive substrate material for high-power electronic devices, and has attracted more and more attention. Its wafer resistivity test has always been a problem. A non-contact resistivity test method is introduced, which can effectively solve this problem. The method uses the principle of capacitor charge and discharge. First of all, the sample is charged instantaneously, and then the instrument real-time detection of the total discharge during the discharge, to get the change in the relaxation curve, after which the curve was mathematically analyzed to obtain the relaxation time τ, and finally calculated using the relaxation time τ Resistivity of silicon carbide single crystal. The actual test, the first chip surface is divided into a number of small area of equal area, and then use the instrument one by one test the resistivity of these areas, and finally all the resistivity data processing into a resistivity profile. This method has positive guidance on the research of semi-insulating materials.