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采用0.25μm GaN HEMT工艺,研制了一款X波段发射前端多功能MMIC,片上集成了一个单刀双掷(SPDT)开关和一个功率放大器电路。其中SPDT开关采用对称的两路双器件并联结构,功率放大器采用三级放大拓扑结构设计,电路采用电抗匹配方式兼顾输出功率和效率。测试结果表明,在8～12 GHz频带内,芯片发射通道饱和输出功率为38.6～40.2 dBm,功率附加效率为29%～34.5%,其中开关插入损耗约为0.8 dB,隔离度优于-45dB。该芯片面积为4mm×2.1mm。
Using a 0.25 μm GaN HEMT process, an X-band transmit front-end multi-function MMIC is developed that incorporates a single-pole double-throw (SPDT) switch and a power amplifier circuit. Which SPDT switch symmetrical two-way dual devices in parallel structure, the power amplifier using three amplifier topology design, the circuit uses the impedance matching to take into account the output power and efficiency. The test results show that the chip output power is 38.6-40.2 dBm and the additional power efficiency is 29% -34.5% in the 8-12 GHz band. The switching insertion loss is about 0.8 dB and the isolation is better than -45 dB. The chip area is 4mm × 2.1mm.