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用TEM观察了InAsSb/A1Sb/GaAs的结构,分析了AlSb过渡层在InAsSb材料生长中的作用,观察到AlSb内位错沿AlSb/GaAs界面垂直延伸约0.25μm。
The structure of InAsSb / AlSb / GaAs was observed by TEM. The effect of AlSb transition layer on the growth of InAsSb material was analyzed. It was observed that the dislocations in AlSb extended vertically about 0.25μm along AlSb / GaAs interface.