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基于JEDEC颁布的结到壳热阻瞬态热测试界面法,对测试GaN HEMT器件热特性的电学法进行了研究。通过合理的测试电路设计,有效解决了GaN HEMT器件电学法测试中的栅极保护问题和自激问题,实现了GaN HEMT器件的界面热阻测量。根据测得的热阻-热容结构函数曲线可知,GaN HEMT器件结到壳热阻主要由金锡焊接工艺和管壳热特性决定。结合结构函数分析,对金锡焊接部分热阻和管壳热阻进行排序可剔除有工艺缺陷的器件。与红外热成像法的结温测试结果进行对比分析,证实了电学法测试结果的准确性。
Based on JEDEC thermal-junction-to-case transient thermal test interface method, the electrical method of testing the thermal properties of GaN HEMT devices was studied. Through the reasonable test circuit design, the gate protection and self-excitation problems in the electrical test of GaN HEMT devices are effectively solved, and the interface thermal resistance measurement of GaN HEMT devices is achieved. According to the measured thermal resistance - heat capacity structure curve shows, GaN HEMT device junction to shell thermal resistance is mainly determined by the gold-tin welding process and the shell thermal characteristics. In combination with the structural function analysis, the thermal resistance of gold-tin solder and the thermal resistance of the package can be sorted to eliminate the device with process defects. Compared with the results of the infrared thermography, the junction temperature test results confirm the accuracy of the electrical test results.