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利用真空蒸镀方法以N2,N7-二(间甲苯胺基)-N2,N7-二苯基-2,7-二胺基-9,9-二甲基芴[2,7-bis(pmethoxyphenyl-m-t′olylamino)-9,9-dimethylfluorene,TPF-OMe]为空穴传输层、8-羟基喹啉铝[tris(8-hydroxyquinolinato)aluminum,Alq3)]作为发光层及电子传输层,制备了双层器件。与制作的典型双层结构N,N′-二苯基-N,N′-二(3-甲基苯基)-1,1′-联苯-4,4′-二胺[N,N-′biphenyl-N,N′-bis-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine,TPD/Alq3]器件相比,电流密度较大,发光效率低,发光谱峰为516 nm,色坐标为(0.30,0.53),为Alq3材料发光。以TPF-OMe为发光层兼空穴传输层,2,9-二甲基-4,7-二苯基-1,10-菲罗啉(2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline,bathocuproine或BCP)为空穴阻挡层,Alq3为电子传输层,制作三层有机电致发光器件。结果表明,光谱峰值在414 nm,色坐标为(0.20,0.24),为蓝色光,是TPF-OMe材料本身发光,器件在15 V电压下电流密度为1137 mA/cm2,亮度为900 cd/m2,在3 V偏压下有最大流明效率,为0.11 lm/W。基于TPF-OMe材料的器件的击穿温度比基于TPD材料的器件高近20℃,原因可能在于TPF-OMe材料比TPD材料高19℃的玻璃化转变温度(Tg)。
A vacuum deposition method was used to deposit a mixture of N, N-bis (m-tolylamino) -N2, N7-diphenyl-2,7-diamino-9,9-dimethylfluorene [2,7-bis -mt’olylamino) -9,9-dimethylfluorene, TPF-OMe] as a hole transport layer, tris (8-hydroxyquinolinato aluminum, Alq3)] as a light emitting layer and an electron transport layer, Double device. With the typical double-layer structure of N, N’-diphenyl-N, N’-bis (3-methylphenyl) -1,1’-biphenyl-4,4’-diamine [N, N Compared with TPD / Alq3 devices, the current density is larger, the luminescence efficiency is lower, the luminescence spectrum The peak was 516 nm with a color coordinate of (0.30, 0.53), which gave the Alq3 material luminescence. With TPF-OMe as the light emitting layer and hole transport layer, 2,9-dimethyl-4,7-diphenyl-l , 10-phenanthroline, bathocuproine, or BCP) as a hole-blocking layer and Alq3 as an electron-transporting layer to produce a three-layer organic electroluminescent device. The results show that the peak of the spectrum is at 414 nm with a color coordinate of (0.20,0.24) and a blue color. The TPF-OMe material itself emits light. The device has a current density of 1137 mA / cm2 at a voltage of 15 V and a luminance of 900 cd / m2 , With maximum lumen efficiency at 3 V bias, 0.11 lm / W. The breakdown temperature of TPF-OMe-based devices is about 20 ° C higher than that of TPD-based devices, probably due to the glass transition temperature (Tg) of the TPF-OMe materials being 19 ° C higher than the TPD materials.